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Contact Person Yao
No. 218, Xinghu Street, Suzhou Industrial Park, Suzhou, Jiangsu, China, suzhou, Jiangsu
2 GaN Templates
性能参数Specifications:
| 产品型号Item | GaN-T-C-N-C*0 | GaN-T-C-P-C*0 | |
| 尺寸Dimensions | Ф *0.8mm ± 0.1mm | ||
| 厚度Thickness | 4 µm, *0~*5 µm | 4 µm | |
| 晶体取向Orientation | C-plane(***1) ± 0.5° | ||
| 导电类型Conduction Type |
N-type (undoped) |
N-type (Si-doped) |
P-type (Mg-doped) |
| 电阻率Resistivity(**0K) | < 0.5 Ω·cm | < 0.*5 Ω·cm | ~ *0 Ω·cm |
| 位错密度Dislocation Density | Less than 5x*08 cm*2 | ||
| 衬底结构Substrate structure | GaN/Sapphire(***1) | ||
| 有效面积Useable Surface Area | > *0% | ||
| 抛光Polishing |
Standard:
SSP Option: DSP |
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| 包装Package | Packaged in a class **0 clean room environment, in cassettes of *5pcs or single wafer containers, under a nitrogen atmosphere. | ||
| Country: | China |
| Model No: | - |
| FOB Price: | Get Latest Price |
| Place of Origin: | - |
| Price for Minimum Order: | - |
| Minimum Order Quantity: | - |
| Packaging Detail: | - |
| Delivery Time: | - |
| Supplying Ability: | - |
| Payment Type: | - |
| Product Group : | - |
