ddr3 4gb laptop ram memory factory in china

Product Description

Memory Type: DDR3
Memory Speed: ***6/***3/***0MHz DDR3
Memory Size: 1GB,2GB/4GB/8GB
Memory Channels: Dual
Memory Socket: SO DIMM
Memory CAS Latency: *******2
Memory Timing:*******2
Pins: **0
Voltage:1.5V
Function: Non ECC Memory
Chip: Original chips.(brand new )
Warranty:Life time
Detail Description:
1) DDR **0/**3 & DDRII **3/**7/**0 & DDR3/***6/***3/***0 MHz.
2) **8/**4/***-pin socket type dual in line memory module (DIMM) .
3) 2.6V power supply
4) Data rate: **0/**3/**3/**7/**0M***6/***3MHZ/***0mhz (max). 
5) 2.5 V (SSTL*2 compatible) I/O for DDR I products, 1.8Vpower supply for DDR II products 
6) Double-data-rate architecture, two data transfers per clock cycle. 
7) Bi-directional, differential data strobe (DQS) is transmitted/received with data, to be
 used in capturing data at the receiver
8) Data s and outputs are synchronzed with DQS.
9) DQS is edge aligned with data for read, center aligned with data for write.
*0) Differential clock s (CK and CK).
*1) DLL aligns DQ and DQS transitions with CK transitions
*2) Commands entered on each positive CK edge: Data and data mask referenced to both edges of DQS.
*3) Four internal banks for concurrent operation (component). 
*4) Data mask(DM) for write data. 
*5) Auto precharge option for each burst access
*6) Programmable burst length: 2, 4, 8 
*7) Programmable/CAS latency (CL): 3 
*8) Programmable output driver strength: Normal/weak 
*9) Refresh cycles: (***2 refresh cycles/*4ms) .
*0) 7.8US maximum average periodic refresh interval.
*1) Posted CAS by programmable additive latency for better command and data bus efficiency 
*2) Off-chip-driver impedance adjustment and on-die-termination for better signal quality .
*3) DQS can be disabled for single-ended data strobe operation 
*4) 2 variations of refresh