High Quality ARSENIC doped Si INGOTS

Product Description

High quality Arsenic Doped Single Silicon Ingots*4", 5", 6" General Specification - only for orientation - we can made a Tailor-made specification based on your requests - Try it! Production Method CZ Diameter 4", 5", 6" Orientation (1.1.1.), (1.0.0.) Conductivity Type N Dopant As (purity 6N) Resistivity nominal < 0.**5 ohmcm, < 0.**3 ohmcm, other requests possible Radial Resistivity Variation < *5 % (1.1.1.), < *0 % (1.0.0.) Oxygen Content to be determined Carbon Content < 2E*6 at/cm3 Dislocation Density < **0 at/cm2 Primary Flat orientation to be determined Primary Flat lenght to be determined Boron Content < 1E*4 at/cm3 Lenght Limitation to be determined Crystalographic Perfection: Free from grain boundaries, twin boundaries, swirls, slip lines and lineages. Mechanical Damage: Free of vissually observed cracks, scratches, blowholes, chips and contamination. Crystal ingot form:As Grown or Grounded surface. Edge of the front plane grouded to max.distance of 1mm. Deflection of the front plane max. to 2mm. Residual Impurities: Guaranteed by usage of virgin polycrystalline Hemlock or Wacker. Packing: Corrugated paper & transport box. Note: ALL PRESENTED POINTS CAN BE CHANGED UPON CUSTOMER'S REQUESTS. "If you are interested in our products, please kindly contact us - we are here for you!"