Monocrystalline silicon wafers, cells, ingots

Product Description

xxxxx silicon wafer **5x**5mm USD 6.*0$ per piece including shipping to USA ****0 wafers for contract Code product W*2/****0/**0 Method cultivation Czochralski Dopand Boron Conductivity P Resistivity ohm. cm 0.**3 Diameter mm **0+/*0.5 Orientation (**0)+/*2º Minority carrier lifetime μs ****5 Dislocation cm² <*0 Oxygen at/cm³ < 1**0^*8 Carbon at/cm³ < 5**0^*7 Length ingot mm ******0 Diagonal mm **0+/*1 Dimension mm **5.0 x**5.0 +/*0.5 Symmetry W,X,Y,Z mm *0.***1.9 Centre of squaring in all directions from center mm <= 0.3 Squareness and parallelism mm < 0.5 Edge orientation (**0),(**1) Thickness μm **0+/**0 Total thickness variation(TTV) μm <*0 Bow μm <*0 Wafer surface orientation (**0)+/*3º Surface saw damage depth μm <*0 Saw traces μm <5 xxxxx silicon solar cell **6x**6mm (C*1/****6/**0) USD *0.*0$ per piece including shipping to USA ****0 wafers for contract Parameters: - Conversion Efficiency - *5% - Rated Power - 3,2 Watts - Voltage 0.5V - Current – 6.0A - Size (pseudo-square) mm – **6x**6 +/- 0.5 - Diagonal (round chamfers) mm – **5 +/- 1.0 - Area cm2 - **7 - Thickness μm - **0 +/- *0 - we will use the export carton to pack for you - one export carton will load **0 pieces this kind of solar cells. 3. Monocrystalline ingot (Square Size) **5x**5mm USD **0$ per 1 mkg including shipping to USA **0mkg for contract Method cultivation - Czochralski Dopand - Boron Conductivity - P Resistivity ohm mm - 0.**3 Diameter mm – **0 +/*0.5 Orientation: **0 +/*2º Minority carrier lifetime msec – ****5 Dislocation cm2 - < *0 Oxygen at/cm³ - < 1x*0^*8 Carbon at/cm³ - < 5x*0^*7 Length ingot mm - ******0 Diagonal mm - **0 +/*1