MOSFET MODULE

Product Description

Product Detail :

DESCRIPTION
The RA*8H***3G is a **-watt RF MOSFET Amplifier
Module for *2.*-volt mobile radios that operate in the 1.**- to
1.**-GHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF signal attenuates up to *0 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the power.

FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD@0 @ VDD=*2.5V, VGG=0V)
• Pout>*8W, hT>*0% @ VDD=*2.5V, VGG=5V, Pin=**0mW
• Broadband Frequency Range: 1.***1.*0GHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: *6 x *1 x 9.*8 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the power