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China
Model No:
oxide silicon wafer
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Contact Person Mr. walliam
pudong, shanghai, shanghai
Our factroy can manufacture the 3",4",6" oxide IC silicon wafer
with high quality and compeitive price.
Grade Prime
Growth Method CZ/FZ
Conductivity Type P type or N
type
Dopant P,B,AS
Resistivity: 0.**1 - 1ohm-cm , 1 - ***0
ohm-cm
FZ(>***0ohm-cm)
thickness: customization
oxide layer thickness:customization
Crystal orientation <**0>
,<**1>,<**0>
surface: no scratch, no saw mark, no chip, no stain
single/double side polished
packing Aluminum foil vacuum
packing
particle <*0 & 0.3um
roughness:<0.5nm
TTV < 4um
TIR < 4um
bow < *0um
warp < *0um
EPD < **0
qty *5pcs/cassette
| Country: | China |
| Model No: | oxide silicon wafer |
| FOB Price: | Get Latest Price |
| Place of Origin: | - |
| Price for Minimum Order: | - |
| Minimum Order Quantity: | - |
| Packaging Detail: | - |
| Delivery Time: | - |
| Supplying Ability: | - |
| Payment Type: | - |
| Product Group : | - |
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