P-Intrinsic-N Field-Effect Transistor

Product Description

We provide two series of P-Intrinsic-N Field-Effect Transistor, one is of low incident light power, the other is of high incident light power. 
As the optical information receiver of optical receiver system, PIN-FET (P-Intrinsic-N Field-Effect Transistor) is used for photovoltaic conversion and signal amplifying. 
Patent Specification Definitions , such as linearity response, minimum linear optical power, linear saturation optical power, matt voltage, bandwidth and root-mean-square noise voltage, which are used in the applications of analog optical fiber systems (for example, fiber optic sensor ). 
These specifications and measurement method can be used to evaluate the performance of fiber optic sensor and analog optical transmission system. The performance indicators include zero stability, random walk, threshold and so on. 

*Features 
Low Noise, High Linearity 
Bandwidth can be Adjust for Different Responsivity 
Compliance Of *4pins/8pins Package are Replaceable 
Excellent Consistency and Reliability 
** 
Linearity ±3% 
Root-Mean-Square (RMS) Voltage ≤0.5mV 
Operating Temperature **5~**0 ℃ 
*Applications 
Fiber Optic Gyroscope (FOG) 
Fiber Optic Current Transformer (FOCT) 
Other Fiber Optic Sensing