Silicon Sputtering Target

Product Description

We supply planar rotary silicon sputtering targets, P type and N type are all available, the purity can up to 6N, the biggest size is *1. We also supply sprayed rotary silicon sputtering targets, the length can up to ***0mm.
type: poly-crystalline or mono-crystalline
purity:5N, 6N
Growth method: Czochralski (CZ)
density:2.*3g/cm3
conductivity type: P type (Boron doped) & N type (phosphorus doped)
Dimension:
length:**0mm max
width:**0mm max
diameter:**0mm max
thickness:***2mm
tolerance:±0.1mm
specific resistance:0.****0.*2 ohm.cm
                              ***0 ohm.cm
                              *0 ohm.cm min 
Planeness (TIR):
  Application Silicon sputtering  target, as a very important functional materials, it mainly used for depositing SiO2, Si3N4 and other dielectric layer by magnetic sputtering process. Those thin films are characterized by excellent hardness, optic, dielectric properties, wear and corrosion resistance, which is widely applied to the field of  LCD transparent conducting glass, LOW-E building  glass and micro-electronics.
 
If you are interested, pls email us your specification for a best quotation.