Silicon Wafer (Ga B)

Product Description

Material Property: Mono**6***6/**0 **6S
Growth Method: CZ
Dislocation Density: <=***0PCS/cm2
Conduction Type: P
Dimensions: **6***6 **0.4mm
Dopant: Ga B
Diameter: **0 *- 0.4mm
Crystal Orientation: <**0> **1.0;
Center Thickness: **0 ***0um
Orientation Deviation: <=1;
Total Thickness Variation: <=*5um
Resistivity: 1~3. Cm
Warp: <=*0um
Life Time; >=*5us
Saw Mark: <=*5um
Oxygen Concentration: <=0.9 **0 *8 atoms/cm3
Chamfer Width Departure(big and small angularity): Lmax-Lmin <=2mm to *5;
Carbon Concentration: <=5**0 *6 atoms/cm3
Surface Condition: No obvious saw mark with the naked eye, no obvious tactility; No pit, no glue residues; Surface as cleaned, no abnormal spot or stain
Indent: Not allowed
Crack: Not allowed
Pinhole: Not allowed
Bright Point Edge: Length <=1/2 of slice dimension, width <=1/3 of slice thickness
Edge Chip: Each edge chip lies within the following criteria: Width <=0.2mm, extension <=0.5mm; Total number of chips on a single slice <=2, spacing>=*0mm