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BLF647
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Contact Person Ms. tang
Yinglong 1st Road, Shenzhen, Guangdong
FEATURES * High power gain * Easy power control * Excellent ruggedness * Source on underside eliminates DC isolators, reducing common mode inductance * Designed for broadband operation (HF to **0MHz) * Internal damping for excellent stability over the whole frequency range. APPLICATIONS * Communication transmitter applications in the HFto**0MHz frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT**0A package with ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA **0MHz, *8V, **0W, >*4.5dB Welcome your enquiry!
| Country: | China |
| Model No: | BLF647 |
| FOB Price: | Get Latest Price |
| Place of Origin: | - |
| Price for Minimum Order: | - |
| Minimum Order Quantity: | - |
| Packaging Detail: | - |
| Delivery Time: | - |
| Supplying Ability: | - |
| Payment Type: | - |
| Product Group : | RF transistor |
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