FOB Price
Get Latest Price750 ~ 750 / ( Negotiable )
|10 Piece Minimum Order
Country:
China
Model No:
-
FOB Price:
750 ~ 750 / ( Negotiable ) Get Latest Price
Place of Origin:
-
Price for Minimum Order:
750
Minimum Order Quantity:
10 Piece
Packaging Detail:
-
Delivery Time:
-
Supplying Ability:
-
Payment Type:
T/T, Other
Product Group :
-
Contact Person alex
Jinhua, Zhejiang
Crees CGHV****0F2 is a gallium nitride (GaN) High Electron Mobility
Transistor
(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally
Matched (IM) FET
offers excellent power added efficiency in comparison to other
technologies. GaN
has superior properties compared to silicon or gallium arsenide,
including higher
breakdown voltage, higher saturated electron drift velocity and
higher thermal
conductivity. GaN HEMTs also offer greater power density and wider
bandwidths
compared to GaAs transistors. This IM FET is available in a
metal/ceramic flanged
package for optimal electrical and thermal performance.
| Parameter | 8.4 GHz | 8.8GHz | 9.0GHz | 9.2GHz | 9.4GHz | 9.6GHz | units |
| linear power | *3.8 | *2.8 | *2.3 | *2.3 | *2.2 | *1.8 | dB |
| output power | *5 | *7 | *1 | *2 | *5 | *5 | W |
| power gain | *0.4 | 9.9 | *0.1 | *0.1 | 9.8 | 9.8 | dB |
| power added efficiency | *7 | *4 | *2 | *4 | *8 | *5 | % |
| Features | Application |
| 8.**9.6 GHz Operation | Marine Radar |
| *0WPOUT typical | Weather Monitoring |
| *0dB Power Gain | Air Traffic Control |
| *5% Typical PAE | Maritime Vessel Traffic Control |
| *0 Ohm Internally Matched | Port Security |
| <0.1 dB Power Droop |
| Country: | China |
| Model No: | - |
| FOB Price: | 750 ~ 750 / ( Negotiable ) Get Latest Price |
| Place of Origin: | - |
| Price for Minimum Order: | 750 |
| Minimum Order Quantity: | 10 Piece |
| Packaging Detail: | - |
| Delivery Time: | - |
| Supplying Ability: | - |
| Payment Type: | T/T, Other |
| Product Group : | - |
