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A3V09H521-24S  A3V09H520-24S N-channel Enhancement Mode Lateral MOSFETs airfast RF Power LDMOS Transisitors A3V09H521-24S  A3V09H520-24S N-channel Enhancement Mode Lateral MOSFETs airfast RF Power LDMOS Transisitors
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A3V09H521-24S A3V09H520-24S N-channel Enhancement Mode Lateral MOSFETs airfast RF Power LDMOS Transisitors

FOB Price

Get Latest Price

31 ~ 40 / Unit

|

10 Unit Minimum Order

Country:

China

Model No:

A3V09H520-24S

FOB Price:

31 ~ 40 / Unit Get Latest Price

Place of Origin:

Shenzhen China

Price for Minimum Order:

31 per Unit

Minimum Order Quantity:

10 Unit

Packaging Detail:

In Tape and Reel.

Delivery Time:

1-3days FOB Shenzhen

Supplying Ability:

2000 Unit per Week

Payment Type:

T/T, Western Union, PayPal

Product Group :

Contact Now
Free Member

Contact Person Mr. Yuanlong

19B hangdu mansion huafu road futian district, Shenzhen, Guangdong

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Product Specification

  • Brand Name: Original

Product Description

Product Description:

This 107W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering  the frequency range 720 to 960 MHz.

Model No. : A3V09H521-24S  / A3V09H520-24S
Instock: 2000 units


Features:
Advanced high performance in-- package Doherty
Greater negative gate -- source voltage range for improved Class C operation
Designed for digital predistortion error correction systems

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Country: China
Model No: A3V09H520-24S
FOB Price: 31 ~ 40 / Unit Get Latest Price
Place of Origin: Shenzhen China
Price for Minimum Order: 31 per Unit
Minimum Order Quantity: 10 Unit
Packaging Detail: In Tape and Reel.
Delivery Time: 1-3days FOB Shenzhen
Supplying Ability: 2000 Unit per Week
Payment Type: T/T, Western Union, PayPal
Product Group : IC

Related Products Shenzhen Yuanlong Microwave Electronics Co., Ltd.

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Mr. Yuanlong < Shenzhen Yuanlong Microwave Electronics Co., Ltd. >

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