mono wafer

Product Description

No. ITEMS SPECIFICATIONS UNITS 1 MATERIAL MONOCRYSTALLINE SILICON 2 DOPING TYPE P 3 GROWING METHOD CZ 4 DOPANT BORON（B） 5 WAFER SIZE **5***5 mm 6 DIAMETER **0±0.5 mm 7 LENGTH **5***5 mm 8 ALLOWANCE LENGTH ±0.5 mm 9 PERPENDICULARITY *0±0.3 *0 THICKNESS **0±*0 μm *1 TTV ≤*0 μm *2 RISISTIVITY A：0.5<ρ<3 B:3≤ρ<6 C:6≤ρ≤*0 Ω•cm *3 LIFE TIME ≥*0 μs *4 ORIENTATION ＜**0＞±1.5° *5 DISLOCATION　DENSITY ≤***0/cm2 *6 OXYGEN　CONTENT ≤1****8atoms/cm3 *7 CARBON　CONTENT ≤5****6atoms/cm3 *8 DAMAGE LAYER ≤*0 μm *9 EDGE DEFECT Depth≤0.3mm, Total Length≤0.5mm (Max 2 pieces) *0 CONTAMINATION AREA NONE *1 SAW MARK ≤*0 μm *2 SURFACE VISIBLE WIRE MARK NONE *3 CRACK NONE *4 WARPAGE ≤*0 μm