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125*125 156*156
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Contact Person Mr. Tyler
baoan building, shanghai, shanghai
Growing Method：DSS Doping Type：P Dopant：Boron (B) Risistivity（ρ）0.**3Ω.cm; **6Ω.cm Life Time: >2μS Wafer Size：**6***6±0.5mm Thinkness:**0±*0 μm Warpage: <*0μm
| Country: | China |
| Model No: | 125*125 156*156 |
| FOB Price: | Get Latest Price |
| Place of Origin: | - |
| Price for Minimum Order: | - |
| Minimum Order Quantity: | - |
| Packaging Detail: | - |
| Delivery Time: | - |
| Supplying Ability: | - |
| Payment Type: | - |
| Product Group : | - |
