Monocrystalline silicon wafer

Product Description

We offer to manufacture and deliver monocrystalline silicon wafer. FOB Point is Moscow. FOB Moscow- 2, 6$ per piece. Monthly available quantity 1 million pieces. Growth method cz Elecrocoductivity type/dopant P/boron Crystallographic axis orientation <**0> Resistivity (central point, on post-annealed samples) 0, 5÷6, 0 ***** (·) group #1 0.**3.0 ***** / group #2 3.**6.0 ***** Resistivity radial spread ≤*5% Carbon content ≤1, 0·***7cm*3 (*3) Oxygen content (k=2, *5) ≤1, 0·***8 cm*3 (*3) Minor carrier lifetime ≥ *0 s () Leneage, twins, swirls - EPD*not allowed 2·**3 cm*2 (*2) Pseudosquare side (in center) **5 ± 1, 0 mm Difference of the sides length measured in center, for two relatively perpendicular directions ≤0, 3 mm Diameter difference for two relatively perpendicular directions ≤0, 2 mm Butt-end surface orientation deviation ± 2, 5 Angle between pseudosquare sides *0 ± 0, 5 Deviation of wafer surface orientation <**0> ± 2, 5 Thickness **0 ± *5 m TTV ≤ *0 m Bow ≤ *0 m Front and back surface quality: Wire saw cutting and cleaning chips of 0, 5 mm in size: 1 pc (per 5% of the lot) marks of saw, oil, and the other contaminations: None