Please enter full name.
Please enter product name.
Select Industry.
Email address already exists
Please enter Password.
Enter Conatct number.
Please enter company name.
Please enter date.
Enter Message
By Signing Up. I agree to TradeKey.com Terms of Use, Privacy Policy, IPR and receive emails related to our services
Thank you, your message has been sent.
Invalid Email.
China China
Contact Person Shirley
Address
JXT has n-type SiC substrates and semi-insulating type SiC substrates, if you need, contact us!SiC substrate material is the core and basic material f
SiC substrate material is the core and basic material for preparing power semiconductor devices.Due to its excellent physical properties such as high
Silicon Carbide (SiC) substrates have high resistivity and are mainly used for GaN heteroepitaxy. RF devices represented by HEMT combine the excellent
SiC power devices can effectively meet the requirements of high efficiency, miniaturization and light weight of power electronic systems with their ex
The Semi-insulating Silicon Carbide (SiC) substrates have high resistivity and are mainly used for GaN heteroepitaxy. RF devices represented by HEMT c
Gallium nitride(GaN) is a new type of semiconductor material for the development of microelectronic devices and optoelectronic devices.The three major
We will contact you soon .
Please select at least one Buyer/Supplier.
Please enter name.
Please select industry.
Enter Password
Please select country.
Please select state.
Please select city.
Please Enter Message.
