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Shenzhen Yuanlong Microwave Electronics Co., Ltd.

19B hangdu mansion huafu road futian district,Shenzhen,Guangdong,China China

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Home Company Shenzhen Yuanlong Microwave Electronics Co., Ltd. Products

Products: 33

NEW QPA4501 GaN PA Module 4.4 to 5.0 GHz 3 W 28 V
NEW QPA4501 GaN PA Module 4.4 to 5.0 GHz 3 W 28 V

The QPA4501 is an integrated 2-stage Power Amplifier Module designed for massive MIMO applictions up yo 3W RMS at the device output covering frequency

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ARF1510 Power Module for off-line 300V operation in high power scientific, medical and, industrial RF power generator amplifier
ARF1510 Power Module for off-line 300V operation in high power scientific, medical and, industrial RF power generator amplifier

Model No.: ARF1510 Brand: APT The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operatio

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PH2856-160 NPN Silicon Microwave Radar Pulsed Power RF Transistor 160W 2.856 GHz 12 s Pulse M/A -COM
PH2856-160 NPN Silicon Microwave Radar Pulsed Power RF Transistor 160W 2.856 GHz 12 s Pulse M/A -COM

Product Description: Model No. :PH2856-160 Instock: 150 units Features NPN Silicon Microwave Power Transistor Common Base Configuration Class C

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SC667665MMMR IC Semiconductors AUTO IC chips
SC667665MMMR IC Semiconductors AUTO IC chips

Product Description Model No. :SC667665MMMR Brand: Original Min. working Temperature: -10 Max. working Temperature : 90 Min. Voltage: 4V Max. Volt

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SD2933-02 ST RF Power Transistors with PCB Board HF/VHF/UHF N-channel Mosfets for 50V DC large signal applications
SD2933-02 ST RF Power Transistors with PCB Board HF/VHF/UHF N-channel Mosfets for 50V DC large signal applications

Model No. : SD2933-02 MKS Power PCB Brand: ST In Stock: 300 pcs Features: Gold metallization Excellent Thermal Stability Common source configuration

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MD7IC2755NR1 RF LDMOS Wideband Integrated Power Amplifiers On-chip Matching  Usable from 2500-2700 MHz
MD7IC2755NR1 RF LDMOS Wideband Integrated Power Amplifiers On-chip Matching Usable from 2500-2700 MHz

Model No. :MD7IC2755NR1 Brand: Freescale NXP In stock 2000 pcs Features: Production Tested in a Symmetrical Doherty Configuration 100% PAR Tested for

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MW7IC2040NBR1 MW7IC2040NB RF LDMOS Wideband Integrated Power Amplifiers 1805 to 1990 MHz CDMA GSM EDGE
MW7IC2040NBR1 MW7IC2040NB RF LDMOS Wideband Integrated Power Amplifiers 1805 to 1990 MHz CDMA GSM EDGE

Product Description The MW7IC2040N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This mult

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TCC3100 SD1456 NPN planar RF & Microwave transistor for high linearity Class AB operation in VHF and Band III television transmitters and transposers
TCC3100 SD1456 NPN planar RF & Microwave transistor for high linearity Class AB operation in VHF and Band III television transmitters and transposers

PRODUCT DESCRIPTION The TCC3100(SD1456) is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for hig

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UF2810P  N-Channel Enhancement Mode DMOS RF MOSFET Power Transistor 10W 28V
UF2810P N-Channel Enhancement Mode DMOS RF MOSFET Power Transistor 10W 28V

Product Description: Model No.:UF2810P Inctock: 200 units Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Bro

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MRF10150 RF Line Microwave Pulse Power Transistor for 10251150 MHz pulse common base amplifier applications TCAS, TACAN and ModeS transmitt
MRF10150 RF Line Microwave Pulse Power Transistor for 10251150 MHz pulse common base amplifier applications TCAS, TACAN and ModeS transmitt

Product Descrition: The RF Line Microwave Pulse Power Transistor isdesigned for 10251150 MHz pulse common base amplifier applications such as TCAS, TA

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MRF134 RF Power Field-Effect Transistor NChannel EnhancementMode for wideband large&frac1
MRF134 RF Power Field-Effect Transistor NChannel EnhancementMode for wideband large&frac1

Product Description The RF MOSFET Line RF Power Field-Effect Transistor(NChannel EnhancementMode)MRF134is designed for wideband largesignal amplifier

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VRF151 APT N-Channel RF Power Vertical Mosfet Broadband HF/VHF Vertical D-Mosism & Military /Commercial Communications Applications
VRF151 APT N-Channel RF Power Vertical Mosfet Broadband HF/VHF Vertical D-Mosism & Military /Commercial Communications Applications

Model No.:VRF**1 Brand: APT In stock **0 pcs Features: **0w with *4dB Typical *@********************th *2dB Typical Gain

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SC667670 IC Semiconductors AUTO IC chips
SC667670 IC Semiconductors AUTO IC chips

Product Description Model No. :SC667670 Brand: Original Min. working Temperature: -40 Max. working Temperature : 125 Min. Voltage: 2V Max. Voltage

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New FLM3135-18F Fujitsu Eudyna high frequency tube C-Band Internally Matched FET
New FLM3135-18F Fujitsu Eudyna high frequency tube C-Band Internally Matched FET

DESCRIPTION The FLM3135-18F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50

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MRFX600HS MRFX600H MRFX600GS RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement High VSWR
MRFX600HS MRFX600H MRFX600GS RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement High VSWR

Model No.:MRFX600HS Brand: Original In stock: 200 Features: Unmatched input and output allowing wide frequency range utilization Output impedan

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FMM5056VF Eudyna RF Power Amplifier PCB standard communications band in the 5.8 to 7.2 GHz Frequency range
FMM5056VF Eudyna RF Power Amplifier PCB standard communications band in the 5.8 to 7.2 GHz Frequency range

Model No.:FMM5056VFRF Power Amplifier PCB Brand:Eudyna Fujitsu In stock:2000 pcs Features: High Output Power: 34.0dBm(typ.) High Liner Gain: 28.0dB(t

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TIM3742-45SL-341 Microwave Power GaAs FET GaN Internally Matched FET
TIM3742-45SL-341 Microwave Power GaAs FET GaN Internally Matched FET

Model No.:TIM3742-45SL-341 Brand: Original In Stock: 30 pcs (First come, first served) Features: Low Intermodulation Distortion IM3=-45 dBc at

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MRF7S38075HS MRF7S38075HR3 MRF7S38075HSR3 N-channel Enhancement Mode Lateral MOSFETs RF Power Field Effect Transisitors
MRF7S38075HS MRF7S38075HR3 MRF7S38075HSR3 N-channel Enhancement Mode Lateral MOSFETs RF Power Field Effect Transisitors

Product Descriprtion: Model No.MRF7S38075HS / MRF7S38075HR3 / MRF7S38075HSR3 Designed for WiMAX base station applications with frequencies up to 3800

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MRFE6S9160HSR3 MRFE6S9160HR3 MRFE6S9160HS N-channel Enhancement Mode Lateral MOSFETs RF Power Field Effect Transisitors
MRFE6S9160HSR3 MRFE6S9160HR3 MRFE6S9160HS N-channel Enhancement Mode Lateral MOSFETs RF Power Field Effect Transisitors

Product Descriprtion: Model No.MRFE6S9160HSR3 / MRFE6S9160HR3 / MRFE6S9160HS Designed for N-CDMA, GSM and GSM EDGE base station applications with freq

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BLF7G22LS-250P 10W plastic LDMOS power transistor for base station applications Semiconductors
BLF7G22LS-250P 10W plastic LDMOS power transistor for base station applications Semiconductors

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Model NO. :BLF7G22LS-25

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A3V09H521-24S  A3V09H520-24S N-channel Enhancement Mode Lateral MOSFETs airfast RF Power LDMOS Transisitors
A3V09H521-24S A3V09H520-24S N-channel Enhancement Mode Lateral MOSFETs airfast RF Power LDMOS Transisitors

Product Description: This 107W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequen

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BLF188XR MICROWAVE RF TUBES Semiconductors
BLF188XR MICROWAVE RF TUBES Semiconductors

Product:Microwave RF tubes Model: BLF188XR condition: New GOLD METALLIZATION Ceramic encapsulation High efficiency Easy power control integrated ESD

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ARF1510 microwave RF power tubes semiconductors Mosfet
ARF1510 microwave RF power tubes semiconductors Mosfet

Product Details: Brand: Microsemi Product Name: RF power Mosfet tubes Model Number: ARF1510 Votage: 400V Power:750w Frequency: 40MHz Gain:17dB (Class

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AE Pinnacle 8705109C RF Power MODULE 8705109 AE
AE Pinnacle 8705109C RF Power MODULE 8705109 AE

Model No. : 8705109C Name:High Power RF Tubes Brand: APT Max. working temperature: 125 min. working temperature: -10 Max. Voltage: 7.5V Min. Volta

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AE Pinnacle AE 8500009A  HFV Driver Exciter AE RF Power MODULE Microwave
AE Pinnacle AE 8500009A HFV Driver Exciter AE RF Power MODULE Microwave

Product Description: Model Number:AE 87000099A RF Power MODULE APEX Professional one station high-frequency tube, RF. Microwave Amplifier Product Pin

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FLL120 FLL120MK L-Band Medium High Power GaAs FET 1 piece
FLL120 FLL120MK L-Band Medium High Power GaAs FET 1 piece

Model No. FLL120MK Description L-Band Medium & High Power GaAs Features : High Output Power: P1dB = 36.0dBm (Typ.) High Gain: G1dB = 11.5dB (Typ.

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AESZ AE Pinnacle AE85010009B AE 85010009 AE RF Power MODULE MFG:900209
AESZ AE Pinnacle AE85010009B AE 85010009 AE RF Power MODULE MFG:900209

AE AE85010009 BAE85010009 AE RF Power MODULE APEX Professional one station high-frequency tube, RF. Microwave Amplifier Model No. :AE85010009 B

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AESZ AE Pinnacle AE85010010A AE 85010010 AE RF Power MODULE MFG:900209
AESZ AE Pinnacle AE85010010A AE 85010010 AE RF Power MODULE MFG:900209

AE AE85000014 AAE85000014 AE RF Power MODULE APEX Professional one station high-frequency tube, RF. Microwave Amplifier Model No.:AE85010010.

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MS2280 Electronic Components APT Package High Frequency RF Tube Microwave transistors Reverse transmission signal source
MS2280 Electronic Components APT Package High Frequency RF Tube Microwave transistors Reverse transmission signal source

Product Descrpition: Product Brand: APT Model No.:MS2280 Instock: 300 units Packaging: High frequency tube Product Category: Electronic Components M

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MS2502W Electronic Components Microsemi Package High Frequency Tubes RF POWER TRANSISTOR
MS2502W Electronic Components Microsemi Package High Frequency Tubes RF POWER TRANSISTOR

Product Description Model No.:MS2502W Instock: 1500 units RF POWER TRANSISTOR Packaging:High Frequency Tubes Min. working temperature: -10 Max. w

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FLL357ME Fujitsu FLL357 L-Band RF Power Transistor Medium High Power GaAs FET
FLL357ME Fujitsu FLL357 L-Band RF Power Transistor Medium High Power GaAs FET

Model No. : FLL357ME L357 Description : The FLL351ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies w

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TIM7785-60SL MOSFET RF AMP Radar transmitting module TOSHIBA TSB Microwave Tube
TIM7785-60SL MOSFET RF AMP Radar transmitting module TOSHIBA TSB Microwave Tube

Model No. :TIM7785-60SL Brand: TOSHIBA Product Name: Microwave RF transister Description: Input Voltage Range: 30V to 60V (65V Abs. Max.) Wide Output

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S-AV32 TOSHIBA FM RF POWER AMPLIFIER MODULE FOR 60-W COMMERCIAL VHF RADIO APPLICATIONS
S-AV32 TOSHIBA FM RF POWER AMPLIFIER MODULE FOR 60-W COMMERCIAL VHF RADIO APPLICATIONS

Model No.:S-AV32 Brand: TOSHIBA In Stock: 200 pcs FM RF POWER AMPLIFIER MODULE FOR 60-W COMMERCIAL VHF RADIO APPLICATIONS Power Gain: 30.7 dB (Min

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